Epitaxial thin films and nanostructures

Invited Speakers:

  • Keisuke Arimoto, University of Yamanashi, Japan
    Growth of strained Si/SiGe on Si(110) substrates for realization of high-mobility devices
  • Elisabeth Blanquet, University of Grenoble Alpes, France
    In situ X-ray synchrotron and optical analysis of ZnO Growth by Atomic Layer Deposition
  • Sylke Blumstengel, Humboldt-Universität zu Berlin, Germany
    Texture and morphology of ZnO/organic heterostuctures grown by molecular beam epitaxy
  • Anatoly V. Dvurechenskii, Russian Academy of Science, Russia
    Silicon Based Quantum Dot Assemblies: Approaches to Tune Space Nucleation and Growth
  • Holger Eisele, Technische Universität Berlin, Germany
    Sub-monolayer InAs/GaAs depositions without and with Sb for fast, directly driven laser devices
  • Andreas Fissel, Leibniz University Hannover, Germany
    Thermodynamics and kinetics of nanocluster formation on semiconductor surfaces
  • Changzhi Gu, Institute of Physics, CAS, China
    The unique physical properties of nanostructured diamond
  • Jürgen W. Gerlach, Leibniz Institute of Surface Modification (IOM), Germany
    Synthesis of polar and non-polar epitaxial GaN thin films by ion-beam nitridation of Ga droplets
  • Azusa N. Hattori, Osaka University, Japan
    3D-architected and integrated metal oxides nanostructures and beyond by three-dimensional nanotemplate pulsed-laser deposition
  • Hidenori Hiramatsu, Tokyo Institute of Technology, Japan
    Heteroepitaxial growth of layered pnictides and chalcogenides films
  • Lei He, InnoScience Inc., USA
    Metamorphic epitaxial growth with MBE
  • Takahiro Ishizaki, Shibaura Institute of Technology, Japan
    Synthesis of Heteroatom-Containing Nanocarbon Materials by Solution Plasma Process in Organic Solution
  • Bharat Jalan, University of Minnesota, USA
    Bandgap Engineered Two-dimensional Electron Gases at the MBE-Grown Complex Oxide Interfaces
  • Hans von Känel, ETH Zürich, Switzerland
    Eliminating defects in three-dimensional micro- and nanocrystals on mismatched substrates
  • Itaru Kamiya, Toyota Technological Institute, Japan
    Epitaxial Growth of InAs-based Quantum Structures on GaAs
  • Kentaro Kaneko, Kyoto University, Japan
    Epitaxial growth of metastable oxide thin films under atmosphere
  • Feng Liu, Northwestern Polytechnical University, China
    Concurring kinetics of phase transition and grain growth in nanostructured alloy
  • Kosuke Matsuzaki, Tokyo Institute of Technology, Japan
    Epitaxial growth of bipolar conducting Cu3N (100) thin films
  • Makoto Minohara, High Energy Accelerator Research Organization (KEK), Japan
    Atomically Engineered Metal-Insulator Transition at the TiO2/LaAlO3 Heterointerface
  • Yuji Matsumoto, Tohoku University, Japan
    Epitaxial growth of SiC films via Si-Ni flux by pulsed laser deposition
  • Balla Diop Ngom, Universit Cheikh Anta Diop de Dakar (UCAD), Senegal
    A-axis Growth of nano structured VO2 Thin films by Pulsed Laser Deposition on substrate glass
  • Hideki Nakazawa, Hirosaki University, Japan
    Pulsed laser deposition of epitaxial silicon carbide and aluminum nitride thin films on silicon substrates
  • Yuefeng Nie, Nanjing University, China
    Atomically precise engineering of oxide interfaces from non-stoichiometric deposition by molecular beam epitaxy
  • Katsuya Oda, Hitachi, Ltd., Research & Development Group, Japan
    Monolithic integrated Ge light emitters fabricated by epitaxial lateral overgrowth
  • Takayoshi Oshima, Tokyo Institute of Technology, Japan
    Epitaxial growth of gamma-phase Ga2O3 semiconductor
  • Jiaoqing Pan, Institute of semiconductors, CAS, China
    InGaAs and InP grown on silicon for high mobility CMOS
  • Bernd Rauschenbach, IOM and University Leipzig, Germany
    Epitaxial GaN films prepared by hyperthermal ion beam assisted molecular beam epitaxy
  • Satchi Kumari Singh, University of Delhi, India
    Pulse propagation in epitaxial ruby thin film
  • Tomas Sikola, Brno University of Technology, Czech Republic
    Real time observation of nanowire growth and selective growth of nanocrystals
  • Takahisa Shiraishi, Tohoku University, Japan
    Low Temperature Deposition of Epitaxial (K,Na)NbO3 Films using Hydrothermal Method
  • Yoshiyuki Suda, Tokyo University of Agriculture and Technology, Japan
    SiGe sputter epitaxy and its application to SiGe 2D devices
  • Alfred Tok, Nanyang Technological University, Singapore
    Atomic Layer Deposition of 3D Photonic Nanostructures for enhancing Solar Energy efficiency
  • Norio Tokuda, Kanazawa University, Japan
    Growth of atomically flat diamond films
  • Ryota Takahashi, University of Tokyo, Japan
    A-site driven ferroelectricity in strained La2NiMnO6 thin films
  • Yoriko Tominaga, Hiroshima University, Japan
    Growth temperature dependence of crystalline state of low-temperature-grown InGaAs on InP substrate
  • Yukta Timalsina, Rensselaer Polytechnic Institute, USA
    Growth, characterization and applications of ultrathin epitaxial copper nanostructures
  • Jose María Ulloa, Universidad Politécnica de Madrid, Spain
    Modified InAs/GaAs quantum dots for enhanced solar cell efficiency
  • Masaki Uchida, The University of Tokyo, Japan
    Epitaxially stabilized oxide film composed of twisted triangular-lattice layers
  • Danyang Wang, University of New South Wales, Australia
    Epitaxial growth of high performance lead-free piezoelectric thin films
  • Maitri Warusawithana, University of North Florida, USA
    New Electronic Functionality in Tailored Complex Oxide Superlattices
  • Shumin Wang, Chalmers University of Technology, Sweden
    Noval dilute bismide for IR optoelectronics
  • Tadeusz Wosinski, Polish Academy of Sciences, Poland
    Magnetic domain wall manipulation in tailored (Ga,Mn)As nanostructures for spintronic applications
  • Xiaoshan Xu, University of Nebraska-Lincoln, USA
    Epitaxial growth of multiferroic hexagonal ferrite thin films
  • Yongbing Xu, Nanjing University, China; and The University of York, UK
    Hybrid Magnetic/Semiconductor Materials : Growth, Structure and Properties
  • Jiandong Ye, Nanjing University, China
    Polarization effect in ZnO based epitaxial structures and devices
  • Lianjie Zhu, Tianjin University of Technology, China
    Room temperature fabrications of copper selenide nanostructures on Cu substrates, formation mechanism and properties
  • Yinlian Zhu, Institute of Metal Research, CAS, China
    Growth and Characterization of Full Flux-closure Quadrants in PbTiO3 thin films
  • Zikang Tang, Hong Kong University of Science & Technology, Hong Kong
    Will the Barrier of ZnO p-type doping be broken?

 

 

Workshop Chair:

  • Maitri Warusawithana, University of North Florida, USA
Operating Organization

OAHOST
Sponsors
UESTC
University of Electronic Science and Technology of China
UARK

Springer