Recent Advances in Growth of Wide Bandgap Materials

Invited speakers:

  • Dimiter Alexandrov, Lakehead University, Canada
    InN and Related Semiconductor Alloys for Novel Photo-voltaic Cells – Low Temperature Epitaxial Growth, Characterization and Properties
  • Thorvald Andersson, Chalmers University of Technology, Sweden
    Plasma-assisted Molecular Beam Epitaxy of ZnO on in-situ Grown GaN/4H-SiC Buffer Layers
  • Elena Borisenko, Russian Academy of Sciences, Russia
    Melt Grown Layered Semiconductors
  • Jiri Cervenka, The University of Melbourne, Australia
    Growth and Characterizaion of Hybrid Diamond-based Heterostructures
  • Daniela Gogova, Leibniz Institute for Crystal Growth, Germany
    Gallium Oxide – A Newly Rediscovered Wide Bandgap Semiconductor
  • Jawad Ul Hassan, Linköping University of Technology, Sweden
    Recent Advances in Epitaxial Growth of 4H-SiC for High Power Devices
  • Soohwan Jang, Dankook University, Korea
    Nonpolar A-plane ZnO Growth for LEDs
  • Satoshi Kamiyama, Meijo University, Japan
    Growth and Characterization of Fluorescent SiC as A High Color-rendering Phosphor Material
  • Kun-Yu Lai, National Central University, Taiwan
    Bottom-up Nanoheteroepitaxy of GaN on Si
  • Elke Meissner, Fraunhofer Institute for Integrated Systems and Device Technology, Germany
    Thorough Study of the Evolution of the Microstructure of Thick GaN Crystals as Substrate Material for Homoepitaxial Processing of GaN Devices
  • Tania Paskova, North Carolina State University, USA
    Recent Advances in Bulk GaN and AlGaN Growth
  • Eberhard Richter, Leibniz-Institut für Höchstfrequenztechnik, Germany
    Perspectives and Challenges of AlGaN HVPE
  • Oleksandr Romanyuk, Academy of Sciences of the Czech Republic, Czech Republic
    Polarity of GaN Surfaces and Nanowires from X-ray Photoelectron Diffraction
  • Nobuhiko Sarukura, Osaka University, Japan
    Growth and Characterization of Bulk and Nano Structured ZnO Crystals for Scintillator Applications
  • Zlatko Sitar, North Carolina State University, USA
    Development of AlGaN-based Technology for Deep UV Emitters
  • Radhakrishnan Sumathi, Ludwig-Maximilians-Universität (LMU) München, Germany
    Hetero-epitaxial Approach of Growing AlN on SiC Substrates for Large-diameter Bulk Single Crystals
  • Gang Wang, Sun Yat_sen University, China
    Recent Progress in GaN-LED with ZnO Transparent Conductive Layer (TCL)
  • Tomohiro Yamaguchi, Kogakuin University, Japan
    RF-MBE Growth of InGaN Alloys and Fabrication of Optical Device Structrues
  • Jincheng Zhang, Xidian University, China
    Epitaxial Growth of High-performance InAlN/GaN Heterostructure by Pulse-MOCVD Technique

 

 

 

 

Workshop chair:

  • Tania Paskova, North Carolina State University, USA
Operating Organization

OAHOST
Sponsors
UESTC
University of Electronic Science and Technology of China
UARK

Springer