Nitrides Thin Films and Applications

Invited speakers:

  • Elisabeth Blanquet, Grenoble Alpes University, France
    Various Applications of Ti-Al-N Thin Films Grown from a Vapor Phase
  • Julien Brault, CNRS-CRHEA, France
    Nitride Quantum Dots for UV Emission and Application to LEDs
  • Virginie Brize, LCIPV laboratory – Innovative Concepts for PV, France
    High Purity Silazane-based Releasing Nitrides Coatings for PV Silicon Crystallization
  • Yong-Hoon Cho, Korea Advanced Institute of Science & Technology, Korea
    Growth and Applications of GaN-based Quantum Photonic Nanostructures
  • Holger Eisele, Technische Universität Berlin, Germany
    Intrinsic and Extrinsic Properties of Non-polar III-N Surfaces
  • Jr-Hau (J.H.) He, National Taiwan University, Taiwan
    Light-harvesting Schemes for Nitride Solar Cells
  • Valentin Jmerik, IOFFE Physico-Technical Institute, Russia
    UV-C Photodetectors and Emitters Grown on C-Al2O3 by Plasma-assisted Molecular-beam Epitaxy
  • Azharul Ariff Kamarulzaman, Universiti Sains Malaysia, Malaysia
    Deposition of GaN/m-plane Sapphire Substrates via Electron Beam Deposition, and Optimization of Post-treatment Condition in Ammonia Environment
  • Frederic Mercier, Science et Ingénierie des MAtériaux et Procédés(SIMaP), France
    Niobium Nitride Thin Films Deposited by High Temperature Chemical Vapor Deposition
  • Kazuhiro Ohkawa, Tokyo University of Science, Japan
    Development of GaN-based Photocatalysts to Produce Hydrogen Energy from Water
  • Michel Pons, Science et Ingénierie des MAtériaux et Procédés(SIMaP), France
    Functionalisation of HTCVD Grown Aluminium Nitride
  • Czeslaw Skierbiszewski, Polish Academy of Sciences, Poland
    High Power True-blue Nitride Laser Diodes by Plasma Assisted Molecular Beam Epitaxy
  • Lai Wang, Tsinghua University, China
    Growth of InGaN Quantum Dots Light-Emitting Diodes by MOVPE

 

 

 

 

 

Workshop chair:

  • Elisabeth  Blanquet, Grenoble Alpes University, France
Operating Organization

OAHOST
Sponsors
UESTC
University of Electronic Science and Technology of China
UARK

Springer